NGTB40N65FL2WG 650V 80A IGBT TO-247-3 Package

SKU: RZ24335290 Category: General

₹ 218.50

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 214.13
11 – 30	3%	₹ 211.95
31 – 50	4%	₹ 209.76
51 – 100	5%	₹ 207.58

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Product Details

Category General

Subcategory General

SKU RZ24335290

This NGTB40N65FL2WG IGBT Trench Field Stop 650 V 80 A 366 W Through Hole TO-247-3‚ Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Field Stop II Trench structure and delivers exceptional performance in demanding switching applications‚ with both low and high power consumption. on-state voltage and little switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A soft and quick copackaged free-wheeling diode with a low forward voltage is included in the device.

Features:

Its soft fast reverse recovery diode
Its maximum temperature 175 Degree Centigrade
Its switching speed is High

Specifications
Part Number	NGTB40N65FL2WG
Operating Temperature Range	-55 to 175
Mounting Style	Through Hole
Power Dissipation	366W
Current	80A
Voltage	650V
Type	IGBT
Package	TO-247-3